In a p-n junction diode, the depletion region is created primarily due to:
A. Drift of electrons under a strong electric field.
B. Heating of the semiconductor material.
C. Recombination of minority carriers.
D. Diffusion of majority charge carriers across the junction.
Answer: Option D
Solution (By JKSSB Mock Tests)
When a p-type and an n-type semiconductor are joined, electrons from the n-side (majority carriers) diffuse across the junction to the p-side, and holes from the p-side diffuse to the n-side due to concentration gradients. They recombine near the junction, leaving behind immobile ionized atoms (positive donor ions on n-side, negative acceptor ions on p-side). This uncovered charge region is the depletion layer.
Explanation:
Resistance of a bulb is R = V^2 / P. The 60W bulb has a higher resistance than the 100W bulb. When connected in series, the exact same current (I) flows through both. The power consumed (which determines brightness) is given by P = I^2R. Since the 60W bulb has higher resistance (R), it consumes more power and glows brighter.
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